Wide-Wavelength GaInAs PIN Photodiodes Using a...

Japanese Journal of Applied Physics 1991 / 8 Vol. 30; Iss. Part 2, No

Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer

Wada, Morio, Sakakibara, Katsutoshi, Higuchi, Masahiko, Sekiguchi, Yoichi, Iwaoka, Hideto
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Volume:
30
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.30.L1501
Date:
August, 1991
File:
PDF, 475 KB
english, 1991
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