Oxidation of Ultrathin SiGe Layer on Si(001): Evidence for...

Japanese Journal of Applied Physics 1994 / 4 Vol. 33; Iss. Part 1, No

Oxidation of Ultrathin SiGe Layer on Si(001): Evidence for Inward Movement of Ge

Prabhakaran, Kuniyil, Nishioka, Takashi, Sumitomo, Koji, Kobayashi, Yoshihiro, Ogino, Toshio
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Volume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.1837
Date:
April, 1994
File:
PDF, 204 KB
english, 1994
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