Fabrication of High Breakdown Pseudomorphic Modulation...

Japanese Journal of Applied Physics 1994 / 12 Vol. 33; Iss. Part 1, No

Fabrication of High Breakdown Pseudomorphic Modulation Doped Field Effect Transistors Using Double Dry Etched Gate Recess Technology in Combination with E-Beam T-Gate Lithography

Hülsmann, Axel, Bronner, Wolfgang, Köhler, Klaus, Braunstein, Jürgen, Tasker, Paul J.
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Volume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.7194
Date:
December, 1994
File:
PDF, 434 KB
english, 1994
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