Rapid Formation of Arsenic-Doped Layer More Than...

Rapid Formation of Arsenic-Doped Layer More Than 1.0 µ m Deep in Si Using Two KrF Excimer Lasers

Jyumonji, Masayuki, Sugioka, Koji, Takai, Hiroshi, Toyoda, Koichi
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Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.6878
Date:
December, 1995
File:
PDF, 699 KB
1995
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