Transport Characterization of Schottky In-Plane Gate Al...

Japanese Journal of Applied Physics 1995 / 12 Vol. 34; Iss. Part 1, No

Transport Characterization of Schottky In-Plane Gate Al 0.3 Ga 0.7 As/GaAs Quantum Wire Transistors Realized by \twltibIn-Situ Electrochemical Process

Okada, Hiroshi, Hashizume, Tamotsu, Hasegawa, Hideki
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Volume:
34
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.6971
Date:
December, 1995
File:
PDF, 904 KB
1995
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