Influence of Poly-Si Potential on Profile Distortion Caused...

Japanese Journal of Applied Physics 1996 / 4 Vol. 35; Iss. Part 1, No

Influence of Poly-Si Potential on Profile Distortion Caused by Charge Accumulation

Ogino, Satoshi, Fujiwara, Nobuo, Miyatake, Hiroshi, Yoneda, Masahiro
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Volume:
35
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.35.2445
Date:
April, 1996
File:
PDF, 106 KB
english, 1996
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