Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction
Tsuchiya, Toshiaki, Ohno, Terukazu, Tazawa, Satoshi, Tomizawa, MasaakiVolume:
36
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.6175
Date:
October, 1997
File:
PDF, 633 KB
english, 1997