Epitaxial Growth of Aluminum on Silicon Substrates by...

Japanese Journal of Applied Physics 1998 / 5 Vol. 37; Iss. Part 1, No

Epitaxial Growth of Aluminum on Silicon Substrates by Metalorganic Molecular Beam Epitaxy using Dimethyl-Ethylamine Alane

Neo, Yoichiro, Otoda, Toshihiro, Sagae, Katumi, Mimura, Hidenori, Yokoo, Kuniyoshi
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.2602
Date:
May, 1998
File:
PDF, 1.20 MB
english, 1998
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