Dielectric Degradation Mechanism of SiO 2 Examined by First-Principles Calculations: Electronic Conduction Associated with Electron Trap Levels in SiO 2 and Stability of Oxygen Vacancies Under an Electric Field
Kitagawa, Isao, Maruizumi, Takuya, Ushio, Jiro, Kubota, Katsuhiko, Miyao, MasanobuVolume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.2021
Date:
April, 2000
File:
PDF, 557 KB
english, 2000