Quantitative Investigation of Hot Carrier Induced Drain...

Japanese Journal of Applied Physics 2001 / 9 Vol. 40; Iss. Part 1, No

Quantitative Investigation of Hot Carrier Induced Drain Current Degradation in Submicron Drain-Engineered Metal-Oxide-Semiconductor Field-Effect-Transistors

Yang, Jiuun-Jer, Chung, Steve Shao-Shiun
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.5285
Date:
September, 2001
File:
PDF, 81 KB
english, 2001
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