Highly Reliable Dynamic Random Access Memory Technology for...

Japanese Journal of Applied Physics 2003 / 4 Vol. 42; Iss. Part 1, No

Highly Reliable Dynamic Random Access Memory Technology for Application Specific Memory with Dual Nitrogen Concentration Gate Oxynitrides Using Selective Nitrogen Implantation

Sugizaki, Taro, Murakoshi, Atsushi, Katsumata, Ryota, Kojima, Manabu, Tanaka, Tetsu, Nakanishi, Toshiro, Nara, Yasuo
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.1870
Date:
April, 2003
File:
PDF, 232 KB
english, 2003
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