Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF...

Japanese Journal of Applied Physics 2003 / 4 Vol. 42; Iss. Part 1, No

Sub-100 nm Gate Technologies for Si/SiGe-Buried-Channel RF Devices

Zeuner, Marco, Hackbarth, Thomas, Enciso-Aguilar, Mauro, Aniel, Frederic, Känel, Hans von
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.2363
Date:
April, 2003
File:
PDF, 372 KB
english, 2003
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