Phosphorus-Assisted Low-Energy Arsenic Implantation...

Japanese Journal of Applied Physics 2003 / 5 Vol. 42; Iss. Part 1, No

Phosphorus-Assisted Low-Energy Arsenic Implantation Technology for N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Source/Drain Formation Process

Imai, Kiyotaka, Shishiguchi, Seiichi, Shibahara, Kentaro, Yokoyama, Shin
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.2654
Date:
May, 2003
File:
PDF, 200 KB
english, 2003
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