Second Breakdown of 18V Grounded Gate NMOS induced by the...

Japanese Journal of Applied Physics 2003 / 9 Vol. 42; Iss. Part 1, No

Second Breakdown of 18V Grounded Gate NMOS induced by the Kirk Effect under Electrostatic Discharge

Jeon, Byung-Chul, Lee, Seung-Chul, Han, Min-Koo
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Volume:
42
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.42.5516
Date:
September, 2003
File:
PDF, 127 KB
english, 2003
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