Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors
Rafí, Joan Marc, Mercha, Abdelkarim, Simoen, Eddy, Hayama, Kiyoteru, Claeys, CorVolume:
43
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.7984
Date:
December, 2004
File:
PDF, 1002 KB
2004