Evaluation of Interface States Density and Minority Carrier...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Evaluation of Interface States Density and Minority Carrier Generation Lifetime for Strained Si/SiGe Wafers Using Transient Capacitance Method

Wang, Dong, Ninomiya, Masaharu, Nakamae, Masahiko, Nakashima, Hiroshi
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2390
Date:
April, 2005
File:
PDF, 124 KB
english, 2005
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