Low-Temperature Formation of Poly-Si...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Low-Temperature Formation of Poly-Si 1- x Ge x ( x : 0–1) on SiO 2 by Au-Mediated Lateral Crystallization

Kanno, Hiroshi, Aoki, Tomohisa, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2405
Date:
April, 2005
File:
PDF, 242 KB
english, 2005
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