Growth and Characterization of Si-Based Light-Emitting...

Japanese Journal of Applied Physics 2005 / 6 Vol. 44; Iss. 6A

Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi 2 -Particles/Si Multilayered Active Region by Molecular Beam Epitaxy

Sunohara, Tsuyoshi, Li, Cheng, Ozawa, Yoshinori, Suemasu, Takashi, Hasegawa, Fumio
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.3951
Date:
June, 2005
File:
PDF, 242 KB
english, 2005
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