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Dielectric Properties of BaTiO 3 Films with SiO Layers Formed by Direct Deposition on Si Substrates using Low-Energy Oxygen-Ion Beams
Yokota, Katsuhiro, Takeda, Akihiro, Kawasaki, Yoshitomo, Nakamura, KazuhiroVolume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.8544
Date:
December, 2005
File:
PDF, 216 KB
english, 2005