Full-Bit Functional, High-Density 8 Mbit One Transistor–One...

Japanese Journal of Applied Physics 2007 / 4 Vol. 46; Iss. 4B

Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process

Udayakumar, K. R., Moise, T. S., Summerfelt, S. R., Boku, K., Remack, K. A., Gertas, J., Haider, A., Obeng, Y., Martin, J. S., Rodriguez, J., Shinn, G., McKerrow, A., Eliason, J., Bailey, R., Fox, G.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.46.2180
Date:
April, 2007
File:
PDF, 208 KB
english, 2007
Conversion to is in progress
Conversion to is failed