Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors
Hung, Cheng-Chou, Liao, Wen-Shiang, Huang, Sheng-Yi, Chen, Kun-Ming, Huang, Guo-Wei, Lien, Chen-HsinVolume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.2872
Date:
April, 2008
File:
PDF, 489 KB
english, 2008