Improvement of Channel Mobility in Inversion-Type n-Channel...

Japanese Journal of Applied Physics 2008 / 10 Vol. 47; Iss. 10

Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing

Yamaji, Kazuki, Noborio, Masato, Suda, Jun, Kimoto, Tsunenobu
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Volume:
47
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.47.7784
Date:
October, 2008
File:
PDF, 876 KB
english, 2008
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