Mobility Behavior of Ge 1- x Sn x Layers Grown on Silicon-on-Insulator Substrates
Nakatsuka, Osamu, Tsutsui, Norimasa, Shimura, Yosuke, Takeuchi, Shotaro, Sakai, Akira, Zaima, ShigeakiVolume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.04DA10
Date:
April, 2010
File:
PDF, 134 KB
english, 2010