Analysis of the Low-Frequency Noise Reduction in Si(100)...

Japanese Journal of Applied Physics 2011 / 4 Vol. 50; Iss. 4

Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors

Gaubert, Philippe, Teramoto, Akinobu, Kuroda, Rihito, Nakao, Yukihisa, Tanaka, Hiroaki, Sugawa, Shigetoshi, Ohmi, Tadahiro
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.04DC01
Date:
April, 2011
File:
PDF, 144 KB
english, 2011
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