Fabrication of InP/InGaAs photodiodes for high bit rate...

Electronics Letters 1991 / 05 Vol. 27; Iss. 11

Fabrication of InP/InGaAs photodiodes for high bit rate communication by reactive ion etching

Seto, M., Deri, R.J., Schiavone, L.M., Bhat, R., Soole, J.B.D., Schumacher, H., Andreadakis, N.C., Koza, M.
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Volume:
27
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19910571
Date:
May, 1991
File:
PDF, 565 KB
english, 1991
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