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Dislocation-Free Junctions Formed by Diffusing Gallium and Boron into Si
Nishida, Katsuhiko, Matsui, Junji, Nakajima, MasatoVolume:
14
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.14.713
Date:
May, 1975
File:
PDF, 552 KB
1975