Downstream Etching of Si and SiO 2...

Japanese Journal of Applied Physics 1989 / 11 Vol. 28; Iss. Part 1, No

Downstream Etching of Si and SiO 2 Employing CF 4 /O 2 or NF 3 /O 2 at High Temperature

Nagata, Akiyoshi, Ichihashi, Hideki, Kusunoki, Yasutomo, Horiike, Yasuhiro
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Volume:
28
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.2368
Date:
November, 1989
File:
PDF, 448 KB
english, 1989
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