Void Formation and Its Effect on Dopant Diffusion and...

Japanese Journal of Applied Physics 1990 / 11 Vol. 29; Iss. Part 2, No

Void Formation and Its Effect on Dopant Diffusion and Carrier Activation in Si-Implanted GaAs

Chen, Samuel, Lee, S.-Tong, Braunstein, G., Ko, K.-Y., Zheng, L. R., Tan, T. Y.
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Volume:
29
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.29.L1950
Date:
November, 1990
File:
PDF, 371 KB
english, 1990
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