![](/img/cover-not-exists.png)
Formation of Dielectric Films for Gap-Filling by NH 3 -Added H 2 O-Tetraethoxysilane Plasma Chemical Vapor Deposition
Muroyama, Masakazu, Kawashima, Atsushi, Sato, Jun-ichiVolume:
32
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.6122
Date:
December, 1993
File:
PDF, 248 KB
english, 1993