Formation of Dielectric Films for Gap-Filling by NH...

Japanese Journal of Applied Physics 1993 / 12 Vol. 32; Iss. Part 1, No

Formation of Dielectric Films for Gap-Filling by NH 3 -Added H 2 O-Tetraethoxysilane Plasma Chemical Vapor Deposition

Muroyama, Masakazu, Kawashima, Atsushi, Sato, Jun-ichi
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Volume:
32
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.6122
Date:
December, 1993
File:
PDF, 248 KB
english, 1993
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