Buried-Channel W N x / W Self-Aligned GaAs MESFET Process with Selectively Implanted Channel and Undoped Epitaxial Surface Layers for MMIC Applications
Nishihori, Kazuya, Kitaura, Yoshiaki, Nagaoka, Masami, Tanabe, Yoshikazu, Mihara, Masakatsu, Yoshimura, Misao, Hirose, Mayumi, Uchitomi, NaotakaVolume:
34
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.34.1241
Date:
February, 1995
File:
PDF, 513 KB
english, 1995