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Thermal Decomposition of CeO$_{\bf 2}$ in Ultra High Vacuum as a Cause of Polycrystalline Growth of Si Films on Epitaxial CeO$_{\bf 2}$/Si
Yamamoto, Yasuhiro, Arai, Satoshi, Matsuda, Taketo, Satoh, Masataka, Inoue, TomoyasuVolume:
36
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.L133
Date:
February, 1997
File:
PDF, 126 KB
english, 1997