Ultrashallow p+/n Junction Formation by 0.5-1 keV Ion...

Japanese Journal of Applied Physics 1998 / 11 Vol. 37; Iss. Part 2, No

Ultrashallow p+/n Junction Formation by 0.5-1 keV Ion Implantation

Park, Jihwan, Lee, Jeong-Youb, Lee, Kilho, Hwang, Hyunsang
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Volume:
37
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.L1376
Date:
November, 1998
File:
PDF, 182 KB
english, 1998
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