Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on...

Japanese Journal of Applied Physics 2000 / 10 Vol. 39; Iss. Part 1, No

Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on a Wafer by Controlling pH of Pretreatment Chemicals: Effect of Oxygen Adsorption

Tsuzuku, Tatsutoshi, Sugimura, Tomoyuki, Kasai, Yuuki, Inokuma, Takao, Iiyama, Kouichi, Takamiya, Saburo
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Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.5788
Date:
October, 2000
File:
PDF, 105 KB
english, 2000
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