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Two Levels of Ni/n-GaAs Schottky Barrier Heights Formed on a Wafer by Controlling pH of Pretreatment Chemicals: Effect of Oxygen Adsorption
Tsuzuku, Tatsutoshi, Sugimura, Tomoyuki, Kasai, Yuuki, Inokuma, Takao, Iiyama, Kouichi, Takamiya, SaburoVolume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.5788
Date:
October, 2000
File:
PDF, 105 KB
english, 2000