Analysis of Degradation Phenomenon Caused by Self-Heating...

Japanese Journal of Applied Physics 2002 / 11 Vol. 41; Iss. Part 1, No

Analysis of Degradation Phenomenon Caused by Self-Heating in Low-Temperature-Processed Polycrystalline Silicon Thin Film Transistors

Inoue, Satoshi, Ohshima, Hiroyuki, Shimoda, Tatsuya
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Volume:
41
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.41.6313
Date:
November, 2002
File:
PDF, 766 KB
2002
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