Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable Ferroelectric Random Access Memory Device
Kim, Hyun-Ho, Park, Jung-Hoon, Song, Yoon-Jong, Jang, Nak-Won, Joo, Heung-Jin, Kang, Seung-Kuk, Joo, Seok-Ho, Lee, Sung-Young, Kim, KinamVolume:
43
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.43.2199
Date:
April, 2004
File:
PDF, 366 KB
english, 2004