Width Effect on Hot-Carrier-Induced Degradation for 90 nm...

Japanese Journal of Applied Physics 2005 / 4 Vol. 44; Iss. 4B

Width Effect on Hot-Carrier-Induced Degradation for 90 nm Partially Depleted SOI CMOSFETs

Lai, Chieh-Ming, Fang, Yean-Kuen, Pan, Shing-Tai, Yeh, Wen-Kuan
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Volume:
44
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.44.2361
Date:
April, 2005
File:
PDF, 942 KB
english, 2005
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