Investigation of DC Hot-Carrier Degradation at Elevated...

Japanese Journal of Applied Physics 2006 / 4 Vol. 45; Iss. 4B

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology

Lin, Jung-Chun, Chen, Shuang-Yuan, Chen, Hung-Wen, Jhou, Ze-Wei, Lin, Hung-Chuan, Chou, Sam, Ko, Joe, Lei, Tien-Fu, Haung, Heng-Sheng
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.3144
Date:
April, 2006
File:
PDF, 590 KB
english, 2006
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