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Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress
Mheen, Bongki, Kim, Mijin, Song, Young-Joo, Hong, SongcheolVolume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.45.4943
Date:
June, 2006
File:
PDF, 353 KB
english, 2006