Fabrication Method of Sub-100 nm Metal–Oxide–Semiconductor...

Japanese Journal of Applied Physics 2010 / 12 Vol. 49; Iss. 12

Fabrication Method of Sub-100 nm Metal–Oxide–Semiconductor Field-Effect Transistor with Thick Gate Oxide

Singh, Vipul, Inokawa, Hiroshi, Endoh, Tetsuo, Satoh, Hiroaki
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Volume:
49
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.128002
Date:
December, 2010
File:
PDF, 788 KB
english, 2010
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