Electrical Characterization of Wafer-Bonded...

Japanese Journal of Applied Physics 2011 / 4 Vol. 50; Iss. 4

Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal–Oxide–Semiconductor Field-Effect Transistor

Iwasaki, Yuji, Nakamura, Yoshiaki, Kikkawa, Jun, Sato, Motoki, Toyoda, Eiji, Isogai, Hiromichi, Izunome, Koji, Sakai, Akira
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.04DA14
Date:
April, 2011
File:
PDF, 664 KB
english, 2011
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