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Dual Metal/High-$k$ Gate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness
Kikuchi, Yoshiaki, Wakabayashi, Hitoshi, Tsukamoto, Masanori, Nagashima, NaokiVolume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.084201
Date:
August, 2011
File:
PDF, 1.02 MB
english, 2011