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Comparison of interfacial and electrical properties between Al 2 O 3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric
Zhu, Shuyan, Xu, Jingping, Wang, Lisheng, Huang, Yuan, Tang, Wing ManVolume:
36
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/36/3/034006
Date:
March, 2015
File:
PDF, 1.45 MB
english, 2015