Schottky Interface Formation between LaB 6 and GaAs(001) Covered with a Native-Oxide Layer
Yokotsuka, Tatsuo, Narusawa, Tadashi, Nakashima, HisaoVolume:
28
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.28.1046
Date:
June, 1989
File:
PDF, 1.25 MB
1989