Scanning Tunneling Microscopy Studies of Semiconductor...

Japanese Journal of Applied Physics 1993 / 3 Vol. 32; Iss. Part 1, No

Scanning Tunneling Microscopy Studies of Semiconductor Surface Passivation

Bringans, R. D., Biegelsen, D. K., Northrup, J. E., Swartz, L.-E.
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Volume:
32
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.1484
Date:
March, 1993
File:
PDF, 562 KB
english, 1993
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