Fabrication of a Si 1-...

Japanese Journal of Applied Physics 1993 / 1 Vol. 32; Iss. Part 1, No

Fabrication of a Si 1- x Ge x Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition

Goto, Kinya, Murota, Junichi, Maeda, Takahiro, SchÜtz, Reiner, Aizawa, Kiyohito, Kircher, Roland, Yokoo, Kuniyoshi, Ono, Shoichi
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Volume:
32
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.32.438
Date:
January, 1993
File:
PDF, 835 KB
1993
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