Effect of Ge Concentration on Static and Microwave...

Japanese Journal of Applied Physics 1994 / 4 Vol. 33; Iss. Part 1, No

Effect of Ge Concentration on Static and Microwave Performances in G e x S i 1- x Heterojunction Bipolar Transistors under High-Level Injection

Chyan, Yih-Feng, Sze, Simon Ming, Chang, Chun-Yen, Reif, Rafael
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Volume:
33
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.33.1803
Date:
April, 1994
File:
PDF, 108 KB
english, 1994
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