Indium Doped nMOSFETs and Buried Channel pMOSFETs with...

Japanese Journal of Applied Physics 1997 / 3 Vol. 36; Iss. Part 1, No

Indium Doped nMOSFETs and Buried Channel pMOSFETs with n + Polysilicon Gate

Lee, Yeong-Taek, Song, Ki-Whan, Park, Byung-Gook, Lee, Jong Duk
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
36
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.1341
Date:
March, 1997
File:
PDF, 616 KB
english, 1997
Conversion to is in progress
Conversion to is failed