Si Molecular Beam Epitaxial Growth over an Atomic-Layer...

Japanese Journal of Applied Physics 1997 / 12 Vol. 36; Iss. Part 1, No

Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties

Suemasu, Takashi, Yamamoto, Masaki, Takakura, Ken'ichiro, Hashimoto, Satoshi, Kumagai, Yoshinao, Hasegawa, Fumio
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.7146
Date:
December, 1997
File:
PDF, 1.86 MB
1997
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