Precipitation of Boron in Highly Boron-Doped Silicon

Japanese Journal of Applied Physics 1998 / 3 Vol. 37; Iss. Part 1, No

Precipitation of Boron in Highly Boron-Doped Silicon

Mizushima, Ichiro, Mitani, Yuichiro, Koike, Mitsuo, Yoshiki, Masahiko, Tomita, Mitsuhiro, Kambayashi, Sigeru
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
37
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.37.1171
Date:
March, 1998
File:
PDF, 735 KB
1998
Conversion to is in progress
Conversion to is failed