Reducing of R On in Vertical Power-MOSFETs due to Local Channel Doping
Fink, Christoph, Schulze, Jörg, Eisele, Ignaz, Hansch, Walter, Werner, Wolfgang, Kanert, WernerVolume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.2637
Date:
April, 2001
File:
PDF, 338 KB
english, 2001